
Si4427BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
0.025
6000
5000
0.020
0.015
V GS = 2.5 V
V GS = 4.5 V
4000
3000
C iss
0.010
0.005
0.000
V GS = 10 V
2000
1000
0
C rss
C oss
0
10
20
30
40
50
0
6
12
18
24
30
10
8
6
4
2
0
I D - Drain Current (A)
On-Resistance vs. Drain Current
V DS = 15 V
I D = 12.6 A
1.6
1.4
1.2
1.0
0.8
0.6
V DS - Drain-to-Source Voltage (V)
Capacitance
V GS = 10 V
I D = 12.6 A
0
20
40
60
80
100
- 50
- 25
0
25
50
75
100
125
150
50
Q g - Total Gate Charge (nC)
Gate Charge
0.030
0.025
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
T J = 150 °C
0.020
I D = 12.6 A
10
0.015
1
T J = 25 °C
0.010
0.005
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72295
S09-0764-Rev. D, 04-May-09
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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